IRG4ZC71KD insulated gate bipolar transistor with ultrafast soft recovery diode features v ces = 600v v ce( on )typ = 1.75v @v ge = 15v, i c = 60a surface mountable short circuit rated ultrafast igbt ? high short circuit rating optimized for motor control, t sc =10s, v cc = 360v , t j = 125c, v ge = 15v ? igbt co-packaged with hexfred ? ultrafast, ultra-soft-recovery antiparallel diodes for use in bridge configurations ? combines low conduction losses with high switching speed ? low profile low inductance smd-10 package ? separated control & power-connections for easy paralleling ? good coplanarity ? easy solder inspection and cleaning benefits ? highest power density and efficiency available ? hexfred diodes optimized for performance with igbts. minimized recovery characteristics ? igbts optimized for specific application conditions c n-channel e g e(k) preliminary pd - 91723 www.irf.com 1 parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 100 i c @ t c = 100c continuous collector current 60 i cm pulsed collector current ? 200 a i lm clamped inductive load current ? 200 i f @ t c = 100c diode continuous forward current 50 i fm diode maximum forward current 200 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 350 p d @ t c = 100c maximum power dissipation 140 t j operating junction and -55 to +150 t stg storage temperature range c absolute maximum ratings w parameter min. typ. max. units r q jc junction-to-case - igbt CCC CCC 0.36 r q jc junction-to-case - diode CCC CCC 0.69 c/w r q cs smd-10 case-to-heatsink (typical), * CCC 0.44 CCC weight CCC 6.0(0.21) CCC g (oz) thermal resistance * assumes device soldered to 3.0 oz. cu on 3.0mm ims/aluminum board, mounted to flat, greased heatsink.
IRG4ZC71KD 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) 343 515 i c = 60a q ge gate - emitter charge (turn-on) 44 66 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 161 242 v ge = 15v t d(on) turn-on delay time 140 t r rise time 63 t j = 25c t d(off) turn-off delay time 475 710 i c = 60a, v cc = 480v t f fall time 133 200 v ge = 15v, r g = 5.0 w e on turn-on switching loss 1.49 energy losses include "tail" e off turn-off switching loss 3.11 mj and diode reverse recovery e ts total switching loss 4.60 6.0 see fig. 9,10,18 t sc short circuit withstand time 10 s v cc = 360v, t j = 125c v ge = 15v, r g = 5.0 w t d(on) turn-on delay time 145 t j = 150c, see fig. 10,11,18 t r rise time 65 i c = 60a, v cc = 480v t d(off) turn-off delay time 630 v ge = 15v, r g = 5.0 w , t f fall time 196 energy losses include "tail" e ts total switching loss 7.6 mj and diode reverse recovery l e internal emitter inductance 2.0 nh measured 5mm from package c ies input capacitance 6850 v ge = 0v c oes output capacitance 730 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 190 ? = 1.0mhz t rr diode reverse recovery time 90 140 ns t j = 25c see fig. 120 180 t j = 125c 14 i f = 50a i rr diode peak reverse recovery current 7.3 11 a t j = 25c see fig. 1116 t j = 125c 15 v r = 200v q rr diode reverse recovery charge 360 550 nc t j = 25c see fig. 780 1200 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery 370 a/s t j = 25c see fig. during t b 220 t j = 125c 17 switching characteristics @ t j = 25c (unless otherwise specified) ns ns parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage 0.5 v/c v ge = 0v, i c = 10ma v ce(on) collector-to-emitter saturation voltage 1.75 2.3 i c = 60a v ge = 15v 2.15 v i c = 100a see fig. 2, 5 1.75 i c = 60a, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -10 mv/c v ce = v ge , i c = 1.5ma g fe forward transconductance ? 31 46 s v ce = 100v, i c = 60a i ces zero gate voltage collector current 500 a v ge = 0v, v ce = 600v 13mav ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop 1.4 1.7 v i c = 60a see fig. 13 1.4 i c = 60a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4ZC71KD www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 0 13 25 38 50 f, frequency (khz) load current (a) for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 44 1 10 100 1000 1234 ce v , collector-to-em itter volta g e ( v ) t = 150c t = 25c j j v = 15v 20s pulse w idth ge a 1 10 100 1000 5 6 7 8 9 10 11 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 150 c j t = 25 c j ic , collector-to-emitter current (a)
IRG4ZC71KD 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 120 c i = a 60 c i = a 30 c 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 sing le pulse (thermal response) therm al r esponse (z ) t , rectan g ular pulse duration ( sec ) a p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c
IRG4ZC71KD www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 1 10 100 0 2000 4000 6000 8000 10000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 100 200 300 400 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 60a cc c 0 10 20 30 40 50 4 6 8 10 12 r , gate resistance total switching losses (mj) g v = 480v v = 15v t = 25 c i = 60a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = 5.0ohm v = 15v v = 480v g ge cc i = a 120 c i = a 60 c i = a 30 c ( w ) w
IRG4ZC71KD 6 www.irf.com fig. 13 - typical forward voltage drop vs. instantaneous forward current fig. 11 - typical switching losses vs. collector current fig. 12 - turn-off soa 20 40 60 80 100 120 0 5 10 15 20 i , collector current (a) total switching losses (mj) c r = 5.0ohm t = 150 c v = 480v v = 15v g j cc ge 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter volta g e (v) i , collector current (a) ce c 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward volta g e drop - v (v) t = 150c t = 125c t = 25c j j j instantaneous forward current - i f (a) w forward voltage drop - v fm (v)
IRG4ZC71KD www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt di (rec) m/dt- (a /s) irr- ( a) trr- (nc) qrr- (nc) 1 10 100 100 1000 f di /dt - (a/s) i = 100a i = 50a i = 25a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - (a/s) i = 100a i = 50a i = 25a f f f v = 200v t = 125c t = 25c r j j 0 1000 2000 3000 4000 100 1000 f di /dt - (a/s) i = 100a i = 50a i = 25a f f f v = 200v t = 125c t = 25c r j j 0 30 60 90 120 150 100 1000 f di /dt - (a/s) i = 100a i = 50a i = 25a f f f v = 200v t = 125c t = 25c r j j
IRG4ZC71KD 8 www.irf.com same t y pe device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic dt 90% v g e +v g e eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +v g 10% +v g 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vc ic dt vce ic dt ic dt vce ic dt
IRG4ZC71KD www.irf.com 9 v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 w (figure 19) a pulse width 80s; duty factor 0.1% ? pulse width 5.0s, single shot
IRG4ZC71KD 10 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 4/98 17.30 n/c e(k) g c ee 4.27 0.90 0.90 5.55 29.00 14.20 case outline smd-10 recommended f ootpr int dimensions are shown in millimeters
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